发明名称 Manufacturing method for semiconductor device embedded substrate
摘要 A manufacturing method for a semiconductor device embedded substrate, includes: a first step of preparing a semiconductor device having a first insulating layer; a second step of preparing a support body, and arranging the semiconductor device on one surface of the support body; a third step of forming a second insulating layer on the one surface of the support body; a fourth step of removing the support body; a fifth step of forming a first wiring pattern on a surface of each of the first insulating layer and the second insulating layer; a sixth step of forming a via-hole from which the first wiring pattern is exposed on the second insulating layer; and a seventh step of forming a second wiring pattern electrically connected on a surface of the second insulating layer.
申请公布号 US7985619(B2) 申请公布日期 2011.07.26
申请号 US20090608383 申请日期 2009.10.29
申请人 SHINKO ELECTRIC INDUSTRIES CO., LTD. 发明人 KOBAYASHI TOSHIO;ARAI TADASHI;YAMANO TAKAHARU
分类号 H01L21/00 主分类号 H01L21/00
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