发明名称 |
Mask patterns including gel layers for semiconductor device fabrication |
摘要 |
Mask patterns include a resist pattern and a gel layer on a surface of the resist pattern having a junction including hydrogen bonds between a proton donor polymer and a proton acceptor polymer. Methods of forming the mask patterns and methods of fabricating a semiconductor device using the mask patterns as etching masks are also provided.
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申请公布号 |
US7985529(B2) |
申请公布日期 |
2011.07.26 |
申请号 |
US20090496185 |
申请日期 |
2009.07.01 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HATA MITSUHIRO;KIM HYUN-WOO;HAH JUNG-HWAN;WOO SANG-GYUN |
分类号 |
G03F7/11;G03F7/40;H01L21/027 |
主分类号 |
G03F7/11 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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