发明名称 |
MASK BLANK AND METHOD OF MANUFACTURING A TRANSFER MASK |
摘要 |
A mask blank includes a transparent substrate and a light-shielding film formed on the transparent substrate. The light-shielding film is made of a material composed mainly of a metal that is dry-etchable with a chlorine-based gas. A resist film is used to form a transfer pattern in the light-shielding film. An etching mask film is formed on an upper surface of the light-shielding film and is made of a material containing a transition metal, silicon, and at least one of nitrogen and oxygen. A content ratio of the transition metal to a total of the transition metal and the silicon in the etching mask film is less than 9%.
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申请公布号 |
US2011177436(A1) |
申请公布日期 |
2011.07.21 |
申请号 |
US201113008356 |
申请日期 |
2011.01.18 |
申请人 |
HOYA CORPORATION |
发明人 |
HASHIMOTO MASAHIRO;IWASHITA HIROYUKI;HIROMATSU TAKAHIRO |
分类号 |
G03F1/32;G03F1/50;G03F1/68;G03F1/80 |
主分类号 |
G03F1/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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