发明名称 MASK BLANK AND METHOD OF MANUFACTURING A TRANSFER MASK
摘要 A mask blank includes a transparent substrate and a light-shielding film formed on the transparent substrate. The light-shielding film is made of a material composed mainly of a metal that is dry-etchable with a chlorine-based gas. A resist film is used to form a transfer pattern in the light-shielding film. An etching mask film is formed on an upper surface of the light-shielding film and is made of a material containing a transition metal, silicon, and at least one of nitrogen and oxygen. A content ratio of the transition metal to a total of the transition metal and the silicon in the etching mask film is less than 9%.
申请公布号 US2011177436(A1) 申请公布日期 2011.07.21
申请号 US201113008356 申请日期 2011.01.18
申请人 HOYA CORPORATION 发明人 HASHIMOTO MASAHIRO;IWASHITA HIROYUKI;HIROMATSU TAKAHIRO
分类号 G03F1/32;G03F1/50;G03F1/68;G03F1/80 主分类号 G03F1/32
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