发明名称 Semiconductor device, has outer base whose upper section is arranged higher than upper section of inner base, where inner peripheral surface of outer base is in contact with outer peripheral surface of inner base
摘要 The device (100) has an electrode insertion base comprising a metallic outer base (5) fitted at a metallic inner base (4) such that an inner peripheral surface of the outer base is in contact with an outer peripheral surface of the inner base. An upper section of the outer base is arranged higher than an upper section of the inner base, when the inner and outer bases are fitted with one another. The insertion base is provided on a circuit pattern formed on an isolation substrate (1). The isolation substrate and the insertion base are sealed with sealing plastic (7).
申请公布号 DE102010043839(A1) 申请公布日期 2011.07.21
申请号 DE20101043839 申请日期 2010.11.12
申请人 MITSUBISHI ELECTRIC CORP. 发明人 YOSHIDA, HIROSHI;OMOTO, YOHEI
分类号 H01L23/48;H01L23/10;H01L23/12 主分类号 H01L23/48
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