发明名称 METHOD FOR MODIFYING AN ETCH RATE OF A MATERIAL LAYER USING ENERGETIC CHARGED PARTICLES
摘要 A method of etching a material layer on a substrate is described. In one embodiment, the method includes modifying an etch resistance of a material layer to a pre-determined etch process by doping the material layer using energetic charged particles, and etching the modified material layer using the pre-determined etch process.
申请公布号 US2011174770(A1) 申请公布日期 2011.07.21
申请号 US20100688405 申请日期 2010.01.15
申请人 TEL EPION INC. 发明人 HAUTALA JOHN J.
分类号 C23F1/00 主分类号 C23F1/00
代理机构 代理人
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