发明名称 |
BACK-GATED FULLY DEPLETED SOI TRANSISTOR |
摘要 |
A fully depleted semiconductor-on-insulator (FDSOI) transistor structure includes a back gate electrode having a limited thickness and aligned to a front gate electrode. The back gate electrode is formed in a first substrate by ion implantation of dopants through a first oxide cap layer. Global alignment markers are formed in the first substrate to enable alignment of the front gate electrode to the back gate electrode. The global alignment markers enable preparation of a virtually flat substrate on the first substrate so that the first substrate can be bonded to a second substrate in a reliable manner.
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申请公布号 |
US2011171792(A1) |
申请公布日期 |
2011.07.14 |
申请号 |
US20100684225 |
申请日期 |
2010.01.08 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHANG LELAND;JI BRIAN L.;KUMAR ARVIND;MAJUMDAR AMLAN;SAENGER KATHERINE;SHI LEATHEN;YAU JENG-BANG |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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