METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to reduce the number of necessary mask processes by patterning the first oxide film of the first region and the second oxide film of the third region concurrently. CONSTITUTION: A semiconductor substrate where the first region, and the second region and the third region defined is provided. The first oxide film(201) having the first thickness on the first region and the second region is formed. The second oxide film(202) having the second thickness smaller than the first thickness is formed in the third region. A part arranged in the second region among the first oxide film is primarily patterned. A part arranged in the first region among the second oxide film and the first oxide film is concurrently patterned.