| 摘要 |
PURPOSE: A stacked semiconductor package and method of manufacturing the same are provided to prevent a void from being formed on a common penetration electrode by forming a penetration electrode from a second penetration hole to a first penetration hole. CONSTITUTION: In a stacked semiconductor package and method of manufacturing the same, a first semiconductor chip(100) comprises a first bonding pad(110), a first penetration hole(120), and a first insulating layer(130). The first semiconductor chip comprises a first side(101) and a second side(102) which are opposite to each other. The second semiconductor chip(200) is arranged in the lower part of the first semiconductor chip. The second semiconductor chip comprises a second bonding pad(210), a second penetration hole(220), and a second insulating layer(230). The common penetration electrode(300) is formed within the first penetration hole and the second penetration hole.
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