| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a chemical mechanical polishing slurry capable of achieving the high-speed, low-erosion and low-scratch chemical mechanical polishing, in a chemical mechanical polishing processing for a conductive material film. Ž<P>SOLUTION: The chemical mechanical polishing slurry contains polishing particles obtained by blending a first colloidal particle having a primary particle size of 5 to 20 nm at the cumulative frequency point of 50% and a second colloidal particle of the same material as the first colloidal particle having a primary particle size exceeding 20 nm at the cumulative frequency point of 50% in a weight ratio of 0.6 to 0.9 of the first to the second colloidal particle in the total amount of the first and the second colloidal particle. Ž<P>COPYRIGHT: (C)2008,JPO&INPIT Ž |
