发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
Provided is a method of manufacturing a semiconductor device in which properties of photoresist through a lithography process are changed to form a dummy structure, and the structure is applied to a process of forming a gate electrode. The method includes the steps of: forming a buffer layer on the top of a semiconductor substrate; applying an inorganic photoresist on the buffer layer, and forming a photoresist pattern using a lithography process; thermally treating the photoresist pattern using a predetermined gas; uniformly depositing an insulating layer on the thermally treated structure, and etching the deposited layer by the deposited thickness in order to expose the thermally treated photoresist pattern; depositing an insulating layer on the etched structure, and etching the deposited insulating layer to expose the thermally treated photoresist pattern; removing the exposed photoresist pattern using an etching process; forming a gate oxide layer in the portion in which the photoresist pattern is removed; and forming a gate electrode on the gate oxide layer. Accordingly, in forming a structure for manufacturing a nano-sized device, the properties of the layer formed by a lithography process are improved through thermal treatment, and thus the structure used to manufacture various devices can be easily formed. |
申请公布号 |
EP1958243(B1) |
申请公布日期 |
2011.07.06 |
申请号 |
EP20060823881 |
申请日期 |
2006.12.04 |
申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
BAEK, IN BOK;LEE, SEONG JAE;YANG, JONG HEON;AHN, CHANG GEUN;YU, HAN YOUNG;IM, KI JU |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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