| 摘要 |
PROBLEM TO BE SOLVED: To precisely form a gate insulating film when a region where a semiconductor film of SiGe etc., is formed and a region where a gate insulating film comprising a silicon oxide film is formed are formed on the same substrate. SOLUTION: The substrate 10 is thermally oxidized to form a first gate insulating film 110 and a second gate insulating film 210 in a first element region 101 and a second element region 201, respectively, and to form a thermal oxidation film on the substrate 10 positioned in a third element region 301 and a fourth element region 401. Then the thermal oxidation film positioned in the fourth element region 401 is removed. Then a semiconductor film 414 is formed on the substrate 10 positioned in the fourth element region 401. Then the thermal oxidation film positioned in the third element region 301 is removed. Further, a third gate insulating film 310 and a fourth gate insulating film 410 are formed on the semiconductor film 414 positioned in the fourth element region 401 and on the substrate 10 positioned in the third element region 301. COPYRIGHT: (C)2011,JPO&INPIT
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