发明名称 SEMICONDUCTOR MEMORY DEVICE PERFORMING PARTIAL SELF REFRESH AND SEMICONDUCTOR MEMORY SYSTEM COMPRISING THE SAME
摘要 PURPOSE: A semiconductor memory device performing a partial self refresh and a semiconductor memory system comprising the same are provided to perform self refresh in only a specific region. CONSTITUTION: In a semiconductor memory device performing a partial self refresh and a semiconductor memory system comprising the same, a memory circuit(220) comprises a memory array A skip address storage(211) stores an address of a region in which the self refresh is not necessary as a skip address. A refresh address generation part(212) outputs the address of the memory array to be refreshed as a refresh address. An address comparison part(213) compares the skip address with the refresh address. The address comparison part outputs a refresh control signal to a memory circuit.
申请公布号 KR20110074285(A) 申请公布日期 2011.06.30
申请号 KR20090131201 申请日期 2009.12.24
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, HYUNG JIK;SOHN, HAN GU
分类号 G11C11/406;G11C11/402;G11C11/4076 主分类号 G11C11/406
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