发明名称 |
SEMICONDUCTOR MEMORY DEVICE PERFORMING PARTIAL SELF REFRESH AND SEMICONDUCTOR MEMORY SYSTEM COMPRISING THE SAME |
摘要 |
PURPOSE: A semiconductor memory device performing a partial self refresh and a semiconductor memory system comprising the same are provided to perform self refresh in only a specific region. CONSTITUTION: In a semiconductor memory device performing a partial self refresh and a semiconductor memory system comprising the same, a memory circuit(220) comprises a memory array A skip address storage(211) stores an address of a region in which the self refresh is not necessary as a skip address. A refresh address generation part(212) outputs the address of the memory array to be refreshed as a refresh address. An address comparison part(213) compares the skip address with the refresh address. The address comparison part outputs a refresh control signal to a memory circuit.
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申请公布号 |
KR20110074285(A) |
申请公布日期 |
2011.06.30 |
申请号 |
KR20090131201 |
申请日期 |
2009.12.24 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, HYUNG JIK;SOHN, HAN GU |
分类号 |
G11C11/406;G11C11/402;G11C11/4076 |
主分类号 |
G11C11/406 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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