发明名称 FILM DEPOSITION APPARATUS
摘要 A film deposition apparatus includes a turntable including a substrate placement region at its surface; first and second reaction gas supply parts disposed in first and second supply regions in a chamber and supplying first and second reaction gases onto the surface, respectively; a separation region disposed between the first and second supply regions, the separation region including a separation gas supply part ejecting a separation gas separating the first and second reaction gases and a ceiling surface forming a separation space to supply the separation gas to the first and second supply regions; and first and second evacuation ports provided for the first and second supply regions. At least one of the first and second evacuation ports is disposed so as to guide the separation gas, supplied to the corresponding supply region, toward and along a direction in which the corresponding reaction gas supply part extends.
申请公布号 US2011155062(A1) 申请公布日期 2011.06.30
申请号 US20100965955 申请日期 2010.12.13
申请人 TOKYO ELECTRON LIMITED 发明人 KATO HITOSHI;TAKEUCHI YASUSHI
分类号 C23C16/00 主分类号 C23C16/00
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