| 摘要 |
One embodiment provides a method of manufacturing semiconductor devices. For example, a sawn and expanded wafer is utilized having dielectrical material deposited between the diced and deposited chips. The method includes placing at least two chips on a metallic layer, depositing mold material on the metallic layer and between the chips, and selectively removing a portion of the mold material from the metallic layer to selectively expose a portion of the metallic layer. The method additionally includes covering the selectively exposed portion of the metallic layer with a conductive material, and singulating the at least two chips.
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