| 摘要 |
<P>PROBLEM TO BE SOLVED: To form a superposition pattern for alignment which carries out the alignment of a photomask with high accuracy when carrying out photolithography thereof. <P>SOLUTION: A method of manufacturing a semiconductor device includes the steps of: forming a first insulating layer 2 on a substrate 1; forming more than one connection holes 4 and a superposition hole 3 for forming the superposition pattern for the alignment whose width is wider than that of the connection hole 4 on the first insulating layer 2; forming a metal film 5 on the first insulating layer 2 so that the connection hole 4 is completely buried with metal and the superposition hole 3 is not completely buried with the metal; forming a first photoresist film 6 on the metal film 5 so that at least the superposition hole 3 is completely buried; and removing part of the first photoresist film 6 and metal film 5 by carrying out CMP processing of the first insulating layer 2 as a stopper. <P>COPYRIGHT: (C)2011,JPO&INPIT |
