发明名称 |
POISON-FREE AND LOW ULK DAMAGE INTEGRATION SCHEME FOR DAMASCENE INTERCONNECTS |
摘要 |
A method of forming a dual damascene structure is disclosed. A lower dielectric hardmask layer and an upper dielectric hardmask layer are deposited on an ultra low-k film. A first via is formed in the upper hardmask layer. Next, a first trench is formed using a tri-layer resist scheme. Finally, a full via and a full trench are formed simultaneously. An optional etch-stop layer can be used in the ultra low-k layer to control trench depth.
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申请公布号 |
US2011143533(A1) |
申请公布日期 |
2011.06.16 |
申请号 |
US201113023315 |
申请日期 |
2011.02.08 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
JIANG PING;DOSTALIK WILLIAM W.;CHOI YONG SEOK |
分类号 |
H01L21/768 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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