| 摘要 |
PROBLEM TO BE SOLVED: To provide a boosting circuit for a P-type semiconductor substrate which is manufactured by a low-cost semiconductor manufacturing process, is subjected to less substrate bias effect, and has high boosting efficiency. SOLUTION: According to the boosting circuit, a P-type MOS transistor is used as a transfer transistor, and a gate terminal is controlled by a clock signal generated by a voltage of a boosted voltage output terminal. A back gate terminal is connected to a source terminal via a resistance. COPYRIGHT: (C)2011,JPO&INPIT
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