发明名称 MEMORY INTERFACE CIRCUIT
摘要 According to one embodiment, a differential circuit receives, as differential inputs, a readout signal read out from a semiconductor storage element and a reference voltage. An equalizing circuit controls, taking into account a state of a past input signal output from the differential circuit, the potential of the present differential signal output from the differential circuit. A sense amplifier detects a state of the differential signal output from the equalizing circuit. A state holding circuit holds a past state of the differential signal detected by the sense amplifier and supplies the state to the equalizing circuit.
申请公布号 US2011128768(A1) 申请公布日期 2011.06.02
申请号 US20100884914 申请日期 2010.09.17
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 SHIMIZU YUUI
分类号 G11C17/00;G11C7/06 主分类号 G11C17/00
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