| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a reflection type projection exposure mask blank such that a pattern of a reflection type mask can be transferred onto a wafer with high precision, to provide a reflection type projection exposure mask, and to provide a method of manufacturing the reflection type projection exposure mask. <P>SOLUTION: The reflection type projection exposure mask blank includes: an absorber layer 101 prepared on a support substrate 100 to substantially absorb EUV light; and a reflective film layer 102 formed on the absorber layer 101 to substantially reflect the EUV light, the reflective film layer 102 being prepared over the absorber layer 101. <P>COPYRIGHT: (C)2011,JPO&INPIT |
