NOVEL WET ETCHING AGENT FOR II-VI SEMICONDUCTORS AND METHOD

摘要

A novel etching agent for etching II-VI semiconductors is provided. The etching agent includes an aqueous solution of potassium permanganate and phosphoric acid. This etching solution can etch II-VI semiconductors at a rapid rate but tend to be much less reactive with III-V semiconductors. The provided agent can be used in a method for etching II-VI semiconductors.