| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing an SiC single crystal, by which SiC having stable quality can be produced for a long time by a solution method. SOLUTION: The method for producing an SiC single crystal comprises growing an SiC single crystal on an SiC seed crystal substrate 9 from a raw material solution 3 containing SiC, C and a solution component other than the two components by the solution method, and includes a process for dissolving C before the start of SiC growth and a process for replenishing SiC after the start of SiC growth. In the process for replenishing SiC, SiC is replenished from a shielding wall 4 made of SiC, provided between a support rod 5 of the SiC seed crystal substrate 9 and a graphite crucible 2, in the solution 3. COPYRIGHT: (C)2011,JPO&INPIT |
