发明名称 |
VACUUM PROCESSING SYSTEM AND METHOD FOR SEMICONDUCTOR SUBSTRATE TO BE PROCESSED |
摘要 |
PURPOSE: A vacuum processing method and a vacuum processing device for a semiconductor substrate are provided to prevent a cross contamination or foreign materials by forming a connection structure which exclusively opens and closes a vacuum process chamber and a vacuum transfer chamber. CONSTITUTION: A standby block(101) transfers a semiconductor wafer under atmospheric pressure and includes a box(106) including a standby transfer robot(109). A vacuum block(102) transfers the wafer under the decompressed atmosphere. A lock chamber(105) is located between a first vacuum transfer chamber(104) and a standby block. The lock chamber transfers the wafer by changing the pressure between the atmospheric pressure and the vacuum pressure.
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申请公布号 |
KR20110052443(A) |
申请公布日期 |
2011.05.18 |
申请号 |
KR20100079645 |
申请日期 |
2010.08.18 |
申请人 |
HITACHI HIGH-TECHNOLOGIES CORPORATION |
发明人 |
TAUCHI SUSUMU;KONDO HIDEAKI;NAKATA TERUO;NOGI KEITA;SHIMODA ATSUSHI;CHIDA TAKAFUMI |
分类号 |
H01L21/68 |
主分类号 |
H01L21/68 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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