发明名称 VACUUM PROCESSING SYSTEM AND METHOD FOR SEMICONDUCTOR SUBSTRATE TO BE PROCESSED
摘要 PURPOSE: A vacuum processing method and a vacuum processing device for a semiconductor substrate are provided to prevent a cross contamination or foreign materials by forming a connection structure which exclusively opens and closes a vacuum process chamber and a vacuum transfer chamber. CONSTITUTION: A standby block(101) transfers a semiconductor wafer under atmospheric pressure and includes a box(106) including a standby transfer robot(109). A vacuum block(102) transfers the wafer under the decompressed atmosphere. A lock chamber(105) is located between a first vacuum transfer chamber(104) and a standby block. The lock chamber transfers the wafer by changing the pressure between the atmospheric pressure and the vacuum pressure.
申请公布号 KR20110052443(A) 申请公布日期 2011.05.18
申请号 KR20100079645 申请日期 2010.08.18
申请人 HITACHI HIGH-TECHNOLOGIES CORPORATION 发明人 TAUCHI SUSUMU;KONDO HIDEAKI;NAKATA TERUO;NOGI KEITA;SHIMODA ATSUSHI;CHIDA TAKAFUMI
分类号 H01L21/68 主分类号 H01L21/68
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