UTILIZATION OF ORGANIC BUFFER LAYER TO FABRICATE HIGH PERFORMANCE CARBON NANOELECTRONIC DEVICES

摘要

PURPOSE: A method for using an organic buffer layer to manufacture a high performance carbon nano electronic device is provided to obtain good leakage properties using NFC-100 and a graphene. CONSTITUTION: A channel material is deposited on a substrate to form a channel(1205). A source metal contact and a drain metal contact are deposited on the channel material. The source metal contact and the drain metal contact are installed in the facing ends of the channel material. A polyhydroxy styrene derivative is deposited on the channel material(1215). A top gate oxide is deposited on a polymer layer(1220). Top gate metal is deposited on the top gate oxide(1225).