| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device that can lower mask cost for data change of a mask ROM and shorten days up to product shipment. SOLUTION: The semiconductor storage device has a first ROM 101 and a second ROM 100, and the first ROM 101 includes: a first word line electrically connected to the gate electrode 13b of a first data transfer transistor; a ground line 17c to which at least one 9b of a source region and a drain region of the first data transfer transistor is electrically connected; a first conductive film 17b to which the other one 9c of the source region and drain region of the first data transfer transistor is electrically connected; an insulating film 28; a second conductive film 20 formed in contact with the insulating film 28, the second conductive film being one electrode of a MIM capacitor; and a bit line 19 electrically connected to the second conductive film 20. The second ROM 100 does not include one electrode of the MIM capacitor. COPYRIGHT: (C)2011,JPO&INPIT
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