发明名称 |
Methods of Programming Semiconductor Memory Devices |
摘要 |
To program a semiconductor memory device, a plurality of target threshold voltage groups are set by dividing target threshold voltages representing states of memory cells. The target threshold voltage groups are substantially simultaneously programmed by applying a plurality of program voltages to a word line. Program end times for the target threshold voltage groups are adjusted.
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申请公布号 |
US2011103151(A1) |
申请公布日期 |
2011.05.05 |
申请号 |
US20100905280 |
申请日期 |
2010.10.15 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM SI-HWAN;JANG JOON-SUC;WOO DUCK-KYUN |
分类号 |
G11C16/04 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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地址 |
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