发明名称 HIGH VOLTAGE RESISTANCE COUPLING STRUCTURE
摘要 The disclosed invention provides a structure and method for providing a high lateral voltage resistance between the electrical networks, sharing a lateral plane, of conductive elements (e.g., having different high voltage potentials) comprising a coupler. In one embodiment, an integrated coupler providing a high lateral voltage resistance comprises a primary conductive element and a secondary conductive element. An isolating material is laterally configured between the electrical network of the primary conductive element and an electrical network of the secondary conductive element. The isolating material may comprise a low-k dielectric layer and prevents any lateral barrier layers (e.g., etch stop layers, diffusion barrier layers, etc.) from extending between the first conductive element and the electrical network of the second conductive element. The structure therefore provides a galvanically isolated integrated coupler which avoids electrical shorting between circuits (e.g., at barrier layers) resulting in an improved high voltage resistance.
申请公布号 US2011095392(A1) 申请公布日期 2011.04.28
申请号 US20090607230 申请日期 2009.10.28
申请人 INFINEON TECHNOLOGIES AUSTRIA AG 发明人 WAHL UWE;HAMMER MARKUS;STENGL JENS-PEER
分类号 H01L29/06;H01L21/762 主分类号 H01L29/06
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