发明名称 |
PROCEDE DE REALISATION D'UNE HOMOJONCTION PN DANS UNE NANOSTRUCTURE |
摘要 |
<p>The method involves forming a dielectric element (3) e.g. inorganic material such as oxide and organic material e.g. polymer, polystyrene, polynaphtalene or polypropylene. The dielectric element is coated on a nanostructure (1) of a semiconductor device (10) to a specific height (H). A potential surface (phi-s) is formed by the dielectric element for inversing conductivity on determined width (W) of a nano component of the nanostructure. Independent claims are also included for the following: (1) a method for realizing a nanostructure with a P-N junction (2) a semiconductor device comprising a nanostructure.</p> |
申请公布号 |
FR2941325(B1) |
申请公布日期 |
2011.04.22 |
申请号 |
FR20090000270 |
申请日期 |
2009.01.22 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE |
发明人 |
ROMAIN LATU EDDY;GILET PHILIPPE |
分类号 |
H01L21/334;H01L29/06;H01L29/868 |
主分类号 |
H01L21/334 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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