| 摘要 |
<p>PURPOSE: A pattern forming method and the resist material is provided to increase the resolution by forming the pitch pattern of a mask pattern with one cycle of exposure and development. CONSTITUTION: The resist material(10) comprises the polymer, the photoacid generator, the photo base generator, the quencher, and the organic solvent. The polymer compound includes the recurring unit having the acid instability radical. The quencher contains the amino group and inactivates the acid generated by the photoacid generator.</p> |
