摘要 |
<p>Disclosed is a photoelectric conversion device having high photoelectric conversion efficiency. A photoelectric conversion device (21) is provided with: a substrate (1); a plurality of lower electrodes (2), which are formed on the substrate (1) and contain metallic elements; a plurality of photoelectric conversion layers (33), which are formed on the plurality of lower electrodes (2), are separate from one another on top of the lower electrodes, and which contain chalcogen compound semiconductors; a metal-chalcogen compound layer (8), which is provided between the lower electrodes (2) and the photoelectric conversion layers (33) and which contains the abovementioned metallic elements and the chalcogen elements contained in the chalcogen compound semiconductors; upper electrodes (5), which are formed on the photoelectric conversion layers (33); and connection conductors (7), which electrically connect the upper electrodes (5) and lower electrodes (2) between the plurality of photoelectric conversion layers (33), without passing through the metal-chalcogen compound layer (8).</p> |
申请人 |
KYOCERA CORPORATION;NISHIMURA, DAISUKE;SUGAWARA, TOSHIFUMI;NISHIURA, KEN;MATSUSHIMA, NORIHIKO;INOMATA, YOSUKE;ARIMUNE, HISAO;UESUGI, TSUYOSHI |
发明人 |
NISHIMURA, DAISUKE;SUGAWARA, TOSHIFUMI;NISHIURA, KEN;MATSUSHIMA, NORIHIKO;INOMATA, YOSUKE;ARIMUNE, HISAO;UESUGI, TSUYOSHI |