发明名称 |
SILICON SINGLE CRYSTAL WAFER, PROCESS FOR PRODUCING SILICON SINGLE CRYSTAL WAFER, AND METHOD FOR EVALUATING SILICON SINGLE CRYSTAL WAFER |
摘要 |
<p>A method for manufacturing a silicon single crystal wafer, having at least: a step of preparing a silicon single crystal ingot; a step of slicing the silicon single crystal ingot to fabricate a plurality of sliced substrates; a processing step of processing the plurality of sliced substrates into a plurality of substrates by performing at least one of lapping, etching, and polishing; a step of sampling at least one from the plurality of substrates; a step of measuring surface roughness of the substrate sampled at the sampling step by an AFM and obtaining an amplitude (an intensity) of a frequency band corresponding to a wavelength of 20 nm to 50 nm to make a judgment of acceptance; and a step of sending the substrate to the next step if a judgment result is acceptance or performing reprocessing if the judgment result is rejection.</p> |
申请公布号 |
KR20110036010(A) |
申请公布日期 |
2011.04.06 |
申请号 |
KR20107029667 |
申请日期 |
2009.05.07 |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD. |
发明人 |
TAHARA FUMIO;OHTSUKI TSUYOSHI;NAGOYA TAKATOSHI;MITANI KIYOSHI |
分类号 |
C30B29/06;C30B33/00;H01L21/02;H01L21/301 |
主分类号 |
C30B29/06 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|