NONVOLATILE SEMICONDUCTOR MEMORY

摘要

Disclosed is a nonvolatile semiconductor memory which comprises: a first gate insulating film that is formed on a channel region of a semiconductor substrate; a first fine particle layer that is formed in the first gate insulating film and contains first conductive fine particles satisfying the Coulomb Blockade conditions; a charge storage part that is formed on the first gate insulating film; a second gate insulating film that is formed on the charge storage part; a second fine particle layer that is formed in the second gate insulating film and contains second conductive fine particles which have an average particle diameter different from that of the first conductive fine particles, while satisfying the Coulomb Blockade conditions; and a gate electrode that is formed on the second gate insulating film.