| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device that can be improved in breakdown voltage, and to provide a method of manufacturing the semiconductor device. <P>SOLUTION: The semiconductor device includes a GaN layer 10, a first insulating layer 13, a second insulating layer 14, an electrode layer, and an FP electrode 17. The GaN layer 10 includes a high-defect region 10a and a low-defect region 10b lower in defect density than the high-defect region 10a, and has a principal surface 10c. The first insulating layer 13 is formed so as to cover the high-defect region 10a on the principal surface 10c of the GaN layer 10. The second insulating layer 14 is formed on the low-defect region 10b on the principal surface 10a of the GaN layer 10, and has an opening formed. The electrode layer is formed in the opening in contact with the principal surface 10a of the GaN layer 10. The FP electrode 17 is formed to be connected with the electrode layer and to overlap the second insulating layer 14. The thickness H13 of the first insulating layer 13 is larger than the thickness H14 of the second insulating layer 14. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
