METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS

摘要

PURPOSE: A semiconductor device manufacturing method and a substrate processing apparatus are provided to restrain the heat diffusion of the impurity ion by implementing the spike anneal in short time and high temperature. CONSTITUTION: A reaction tube(10) is located concentrically with a heater in the inner side of a heater(9). A process chamber(4) for oxidizing a plurality of substrates is formed within the reaction tube. The bottom of the reaction tube is opened in order to insert a boat(3). The opening portion of the reaction tube is configured to be sealed by a seal cap(13).