发明名称 Semiconductor device and method for manufacturing same
摘要 A semiconductor device includes: a semiconductor substrate; a lateral MOSFET formed in an upper portion of a first region of the semiconductor substrate; a vertical MOSFET formed in a second region of the semiconductor substrate; a backside electrode formed on a lower surface of the semiconductor substrate and connected to a lower region of source/drain regions of the vertical MOSFET; and a connecting member penetrating the semiconductor substrate and connecting one of source/drain regions of the lateral MOSFET to the backside electrode.
申请公布号 US7910984(B2) 申请公布日期 2011.03.22
申请号 US20090355591 申请日期 2009.01.16
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 YAMAGUCHI YOSHIHIRO;KAWAGUCHI YUSUKE;AKIYAMA MIWAKO
分类号 H01L29/76 主分类号 H01L29/76
代理机构 代理人
主权项
地址