发明名称 |
Semiconductor device and method for manufacturing same |
摘要 |
A semiconductor device includes: a semiconductor substrate; a lateral MOSFET formed in an upper portion of a first region of the semiconductor substrate; a vertical MOSFET formed in a second region of the semiconductor substrate; a backside electrode formed on a lower surface of the semiconductor substrate and connected to a lower region of source/drain regions of the vertical MOSFET; and a connecting member penetrating the semiconductor substrate and connecting one of source/drain regions of the lateral MOSFET to the backside electrode.
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申请公布号 |
US7910984(B2) |
申请公布日期 |
2011.03.22 |
申请号 |
US20090355591 |
申请日期 |
2009.01.16 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
YAMAGUCHI YOSHIHIRO;KAWAGUCHI YUSUKE;AKIYAMA MIWAKO |
分类号 |
H01L29/76 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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