PROCESS FOR PRODUCTION OF SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE

摘要

A process for producing a semiconductor device in which a resistor is formed on the surface of a semiconductor substrate having a LOCOS oxide film, comprising: a polysilicon film formation step of forming a first polysilicon film along the boundary between the LOCOS oxide film and the semiconductor substrate so that the first polysilicon film covers the boundary; a resistor formation step of doping an impurity into the surface of the semiconductor substrate using the first polysilicon film as a mask to form the resistor; and a contact formation step of forming two or more contact holes on the resistor and forming a wiring layer that is connected to the contact holes and cannot directly connect the contact holes electrically to each other.