NANO-WIRE FIELD EFFECT TRANSISTOR, METHOD FOR MANUFACTURING THE TRANSISTOR, AND INTEGRATED CIRCUIT INCLUDING THE TRANSISTOR

摘要

Provided is a method for fabricating a nano-wire field effect transistor including steps of: preparing a nano-wire field effect transistor including two columnar members made of a silicon crystal configuring a nano-wire on a substrate are arranged on a substrate in parallel and one above the other, and an SOI substrate having a (100) surface orientation; processing a silicon crystal layer configuring the SOI substrate into a standing plate-shaped member having a rectangular cross-section; processing the silicon crystal by orientation dependent wet etching and thermal oxidation into a shape where two triangular columnar members are arranged one above the other with a spacing from each other as to face along the ridge lines of the triangular columnar members; and processing the triangular columnar member into a circular columnar member configuring a nano-wire by hydrogen-annealing or a thermal oxidation; and an integrated circuit including the transistor.