发明名称 |
FLASH MEMORY DEVICE CONFIGURED TO REDUCE COMMON SOURCE LINE NOISE, METHODS OF OPERATING SAME, AND MEMORY SYSTEM INCORPORATING SAME |
摘要 |
A flash memory device comprises memory cells connected between a bit line and a common source line, word lines connected to the memory cells, a common source line feedback circuit connected to a common source line (CSL) to detect the voltage level of the common source line, and a CSL feedback control logic configured to control a voltage level of a selected word line or a selected bit line to be compensated to a substantially constant value during a sensing operation of the memory cells based on the detected voltage level of the CSL.
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申请公布号 |
US2011058427(A1) |
申请公布日期 |
2011.03.10 |
申请号 |
US20100838584 |
申请日期 |
2010.07.19 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI YOON-HEE;PARK KI TAE;KIM BO GEUN |
分类号 |
G11C16/06;G11C16/04 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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