| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device, including a three-dimensional memory cell array capable of securing high integration and process margins. <P>SOLUTION: The semiconductor memory device includes a planar substrate; a memory string array formed vertical to the substrate, and consisting of a plurality of memory strings, each memory string including a plurality of storage cells; and a plurality of word lines mutually superposed in a horizontal direction. Each word line includes a first portion which is parallel to the substrate and connected to the memory string, and a second portion extending from the first portion, and inclined upward relative to the substrate, and the memory string array is arranged in an intermediate portion of the first portion of each of the plurality of the word lines and respectively forms corresponding storage cells by being connected to each word line, wherein a first and second groups of the plurality of word lines are electrically connected to each of a first and second groups of a first and second conductive lines disposed at a first and second sides of the memory string array. <P>COPYRIGHT: (C)2011,JPO&INPIT |
