| 摘要 |
1275044 Deposition of oxide films UNITED KINGDOM ATOMIC ENERGY AUTHORITY 6 June 1969 [8 May 1968] 21882/68 Heading C1A [Also in Division H1] A metal oxide film is deposited on a substrate by passing a carrier gas over a chloride of the metal at such a temperature as to volatilize the metal chloride, and passing the carrier gas and metal chloride over the substrate in the presence of water, the substrate being maintained at such a temperature that the metal chloride is hydrolysed by the water to deposit the oxide on the substrate. A mixed oxide film may be deposited by passing separate streams of carrier gas over two different metal chlorides (which may be maintained at different temperatures). The water may be derived from an equimolar mixture of CO 2 and H 2 or by passing a non- reactive carrier gas, e.g. argon or nitrogen, through water. If the CO 2 /H 2 mixture is used as a carrier gas the volatilization temperature of the metal chloride should be below that at which hydrolysis occurs. The metal oxide may be one (or more) of zirconium, scandium, tin, indium, manganese, and cobalt. In the example there is described the formation of a thin film of zirconia stabilized with scandia deposited on a nickel substrate (which can then be used as a fuel cell electrolyte) and then a further film of mixed indium-tin oxide is applied to the zirconia film (which can then be used as a fuel cell electrode). |
