| 摘要 |
An electrostatic discharge (ESD) protection circuit configured completely inside one of a power pad and an I/O pad of an electronic circuit, the ESD protection circuit comprising an electrostatic discharge (ESD) circuit that, when activated, discharges an ESD from a first voltage bus to a second voltage bus. The second voltage bus is at a lower electrical potential than the first voltage bus. An ESD discharge control circuit in electrical connection with the ESD discharge circuit that controls the activation of the ESD discharge circuit and including an NMOS transistor and an electrical node. The NMOS transistor regulating a rate of voltage decay of the electrical node from a predetermined high voltage level to a lower voltage level, the regulation of the rate of voltage decay of the electrical node is non-linear. The activation of the ESD discharge circuit determined by the rate of voltage decay of the electrical node.
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