发明名称 Non volatile storage device has supply voltage generator, which produces supply voltage and address decoder, which contains transistor for receiving supply voltage
摘要 <p>The non volatile storage device (100) has a supply voltage generator (140), which produces supply voltage (VPP) and an address decoder (120), which contains a transistor for receiving supply voltage. The selected storage block passes the received word line voltage (VWL) to the multiple word lines (WL0 to WLm-1). The supply voltage varies as a function of a negative word line voltage is passed on to one of the word lines. An independent claim is also included for a method for driving a non volatile storage device.</p>
申请公布号 DE102010036353(A1) 申请公布日期 2011.03.03
申请号 DE20101036353 申请日期 2010.07.12
申请人 SAMSUNG ELECTRONICS CO. LTD. 发明人 KIM, MOOSUNG
分类号 G11C16/08 主分类号 G11C16/08
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