发明名称 |
Non volatile storage device has supply voltage generator, which produces supply voltage and address decoder, which contains transistor for receiving supply voltage |
摘要 |
<p>The non volatile storage device (100) has a supply voltage generator (140), which produces supply voltage (VPP) and an address decoder (120), which contains a transistor for receiving supply voltage. The selected storage block passes the received word line voltage (VWL) to the multiple word lines (WL0 to WLm-1). The supply voltage varies as a function of a negative word line voltage is passed on to one of the word lines. An independent claim is also included for a method for driving a non volatile storage device.</p> |
申请公布号 |
DE102010036353(A1) |
申请公布日期 |
2011.03.03 |
申请号 |
DE20101036353 |
申请日期 |
2010.07.12 |
申请人 |
SAMSUNG ELECTRONICS CO. LTD. |
发明人 |
KIM, MOOSUNG |
分类号 |
G11C16/08 |
主分类号 |
G11C16/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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