发明名称 MATERIAL GAS DECOMPOSING MECHANISM, THIN FILM MANUFACTURING DEVICE, THIN FILM MANUFACTURING METHOD, AND THIN FILM LAMINATE
摘要 PROBLEM TO BE SOLVED: To provide a material gas decomposing mechanism that facilitates depositing a thin film of high quality on a substrate. SOLUTION: The material gas decomposing mechanism provided for a thin film manufacturing device 1 that achieves vapor-phase deposition of a thin film on a substrate 21 in a pressure-reduced chamber 17, and decomposing decomposition species of one or a plurality of kinds of material gases being a material of the thin film to generate decomposition species of the material gases is provided with one or a plurality of gas introduction pipes 13 each having an opening communicating with a reaction room and configured to introduce the material gas into the reaction room through the opening, a catalyst 10 for material gas decomposition in proximity to the opening while displaced toward the substrate more than an opening surface of the opening on the side of the reaction room, and a heating power supply 12 for raising a temperature of the catalyst 10 by turning on electricity to the catalyst 10 through wires 11a, 11b. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011040771(A) 申请公布日期 2011.02.24
申请号 JP20100216015 申请日期 2010.09.27
申请人 FURUKAWA ELECTRIC CO LTD:THE 发明人 SHINAGAWA TATSUSHI;ISHII HIROTATSU;KASUKAWA AKIHIKO
分类号 H01L21/203;C23C14/24;C23C16/452;H01L21/205;H01L21/31 主分类号 H01L21/203
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