发明名称 NON-VOLATILE STATIC RANDOM ACCESS MEMORY (NVSRAM) DEVICE
摘要 A non-volatile static random access memory (NVSRAM) device includes a volatile circuit and a non-volatile circuit. Under normal operations when an external power is supplied, the volatile circuit can provide fast data access. When the power supply is somehow interrupted, the non-volatile circuit can provide data backup using an inverter circuit and a non-volatile erasable programmable memory (NVEPM) circuit, thereby retaining data previously stored in the volatile circuit.
申请公布号 US2011044109(A1) 申请公布日期 2011.02.24
申请号 US20090542711 申请日期 2009.08.18
申请人 SHIH PING-CHIA;SHIH CHUNG-CHIN 发明人 SHIH PING-CHIA;SHIH CHUNG-CHIN
分类号 G11C14/00;G11C5/14 主分类号 G11C14/00
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