SUBSTRATE STRUCTURE AND MANUFACTURING METHOD OF THE SAME
摘要
PURPOSE: A substrate structure and a manufacturing method of the same are provided to prevent Si from being melt-back through Ga by oxidizing the surface of a substrate and a pattern region after forming the pattern region. CONSTITUTION: A substrate structure comprises a substrate(20) and a buffer layer(22) The buffer layer is formed on the substrate by a certain pattern. A buffer layer is supported by a substrate protrusion which is formed after the surface of the substrate is etched. The bottom of a buffer layer which is not contacted with the substrate protrusion is exposed to outside. A nitride semiconductor layer is formed through lateral growth which is rapider vertical growth.
申请公布号
KR20110018105(A)
申请公布日期
2011.02.23
申请号
KR20090075733
申请日期
2009.08.17
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
KIM, JUN YOUN;HONG, HYUN GI;TAK, YOUNG JO;LEE, JAE WON;JEONG, HYUNG SU