发明名称 Self aligned integration of high density phase change memory with thin film access device
摘要 Embodiments of the present invention provide a method that includes depositing a first electrode film on one or more wordline structures, depositing a phase change material (PCM) film on the first electrode film, depositing a second electrode film on the PCM film, depositing a third electrode film on the second electrode film, depositing an access device film on the third electrode film, and depositing a fourth electrode film on the access device film to form a stack of films, wherein the stack of films comprises the first electrode film, the PCM film, the second electrode film, the third electrode film, the access device film, and the fourth electrode film. Other embodiments may be described and/or claimed.
申请公布号 US7892936(B1) 申请公布日期 2011.02.22
申请号 US20090435713 申请日期 2009.05.05
申请人 MARVELL INTERNATIONAL LTD. 发明人 WU ALBERT;CHANG RUNZI
分类号 H01L21/8239;H01L45/00 主分类号 H01L21/8239
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