| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that an Mo layer needs to be formed larger than a size which is necessary as an electrode since an anode electrode of a Schottky barrier diode has a laminate structure of Mo, Ti, Ni, Al and the Mo layer is overetched to inside a mask as the same etchant is used for Ni and Mo to pattern the respective metal layers through wet etching and Mo is higher in etching rate than Ni, and to solve the problem that a diode having a current path formed in a substrate horizontal direction is not made more compact since a current path between an anode and a cathode becomes long and forward voltage Vf characteristics deteriorate. SOLUTION: The diode, having an n-type semiconductor layer provided on a surface of a p-type semiconductor substrate and also having the current path formed in the horizontal direction of the substrate, has an anode electrode structure formed by laminating a molybdenum silicide layer, a Ti layer, and an Al layer on a surface of the n-type semiconductor layer. The Mo layer is removed by entire-surface etching after being made into silicide, and the Ni layer is eliminated. COPYRIGHT: (C)2011,JPO&INPIT |
