| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an integrated thin film type of photoelectric converter which can change the area of a light-receiving section of each photoelectric conversion element according to the distribution of the film thickness of thin-film silicon, even when the film thickness of the thin-film silicon deposited as a photoelectric conversion layer is nonuniform, from the center to the peripheral part of a substrate. <P>SOLUTION: A photoelectric converter is provided with an insulating substrate 1 and a plurality of photoelectric conversion elements 12a to 12z. A plurality of the photoelectric conversion elements 12a to 12z are formed directed toward the outer periphery of the insulating substrate 1, from the center part of the insulating substrate 1, in such a manner as to successively surround the outer periphery of the photoelectric conversion elements which are formed relatively in the inside. A plurality of the photoelectric conversion elements are connected successively electrically in series, from the photoelectric conversion element 12a that is formed in the innermost side including the center part directed toward the photoelectric conversion element 12z that is formed in the outermost periphery. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
