| 摘要 |
PURPOSE: In-Co-Ni-Sb-based skutterudite thermoelectric material and a manufacturing method thereof are provided to manufacture InzCo4-xNixSb12 skutterudite thermoelectric material having excellent performance and to improve thermoelectric figures of merit in a medium temperature range of CoSb2 skutterudite. CONSTITUTION: In-Co-Ni-Sb-based skutterudite thermoelectric material has composition of InzCo4-xNixSb12 in which an air gap within a unit lattice is filled with In and in which Ni is doped. The z and x have the range of 0<z<=0.25 and 0<x<=0.2. The raw material Co, Sb, In, and Ni are encapsulated under vacuum. The mixture of the vacuum encapsulated material is heated and molten in an encapsulated induction melting furnace. The material is vacuum heat-treated for the activation of Ni. |
