发明名称 Character pattern extracting method, charged particle beam drawing method, and character pattern extracting program
摘要 A character pattern extracting method includes ranking character patterns whose number is larger than a maximum number of character patterns in an aperture, depending on the number of reference times in design data of a semiconductor device, extracting first extraction patterns whose number is smaller than the maximum number from the large number of read character patterns in a descending order of the reference time number, defining character patterns except the first extraction patterns out of the larger number of character patterns as candidate patterns, selecting from the candidate patterns a plurality of candidate patterns whose number corresponds to a difference between the number of extracted patterns from the maximum number, and creating combinations of the selected candidate patterns, and extracting second extraction patterns included in a combination among the combinations of candidate patterns, in which a manufacturing time of the semiconductor device is most shortened.
申请公布号 US7889910(B2) 申请公布日期 2011.02.15
申请号 US20070797531 申请日期 2007.05.04
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 NAKASUGI TETSURO;OTA TAKUMI;KOSHIBA TAKESHI;SASAKI NORIAKI
分类号 G06K9/00 主分类号 G06K9/00
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