| 摘要 |
PURPOSE: A metal line of a semiconductor device and a manufacturing method therefore are provided to increase etch margin by adding an additional metal layer which is used as an etch barrier. CONSTITUTION: First metal wiring layers(101a,101b) are formed on the top of a semiconductor substrate. A first conductive layer(102) is formed on the top of the first metal wiring layer. Second metal wiring layers(105a,105b) are formed on the top of the first conductive layer. A first contact exposing the first conductive layer to outside is formed by selectively etching second metal wiring layer. A third metal wiring layer(109) is formed on a structure including the first contact. |
